Modulation doped field effect transistor.

摘要

The modulation doped field effect transistor (10) is formed to have a drain (28, 12, 11) that is vertically displaced from the source (16, 17) and channel (20, 21) regions. The transistor has the source, channel and a portion of the drain (28) arranged laterally so that current (27) flows from the source laterally to the drain. A heterojunction layer (18) on the channel region facilitates forming a two dimensional electron gas in the channel region which provides the transistor with a high transconductance.