| 发明名称 |
P-TYPE SOURCE/DRAIN MAKING METHOD |
| 摘要 |
The method comprises implanting an impurity to form the p+ source/drain on a semiconductor substrate, and forming an amorphous layer by implantaion of argon ions and heat-treating it. Pref. the impurity for fomation of p+ type source/drain is one of B11 and BF2. The method prevents damage of the semiconductor substrate and reduce leakage current.
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| 申请公布号 |
KR950013432(B1) |
申请公布日期 |
1995.11.08 |
| 申请号 |
KR19920019166 |
申请日期 |
1992.10.19 |
| 申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
LEE, U - BONG;JANG, YONG - AM;KO, JAE - WAN;HYON, IL - SON |
| 分类号 |
H01L21/265;H01L21/336;H01L29/78;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
| 代理机构 |
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