Method of fabricating integrated devices

摘要

A method comprising the steps of depositing a first and second polysilicon layer, separated by an oxide layer; selectively etching the second polysilicon layer to form first gate regions; forming first substrate regions in the substrate and laterally in relation to the first gate regions; selectively etching the first polysilicon layer to form second gate regions of a length greater than the first gate regions; and forming in the substrate, laterally in relation to the second gate regions and partially overlapping the first substrate regions, second substrate regions of a higher doping level than the first substrate regions.