发明名称 |
Method for taper etching metal |
摘要 |
A method for forming a tappered first metal wiring layer is described incorporating a substrate, a second metal layer formed as the upper layer on the first metal layer, a third metal layer having a diffusion coefficient lower than the diffusion coefficients of the above two metal layers formed between the first and the second metal layers, a resist pattern formed on the second metal layer, wherein the first metal layer is etched using the patterns of the second and the third metal layers and the resist pattern as etching masks to form a tapered cross-sectional pattern of the first metal wiring layer.
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申请公布号 |
US5464500(A) |
申请公布日期 |
1995.11.07 |
申请号 |
US19940286604 |
申请日期 |
1994.08.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
TSUJIMURA, TAKATOSHI;KITAHARA, HIROAKI |
分类号 |
H01L21/306;C23F1/02;H01L21/3205;H01L21/3213;H01L21/48;H01L29/78;H01L29/786;(IPC1-7):C23F1/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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