Index-guided laser on a ridged (001) substrate

摘要

Index-guided semiconductor lasers having buried ridge waveguides which use the optical confinement resulting from the bandgap difference between a semiconductor material grown on the top plane of the ridge and a semiconductor material grown on the ridge's sidewalls. Beneficially AlGaInP is OMVPE formed on a ridged (001) GaAs substrate in which a sidewall of the ridge is at an angle of between 5 degrees and the {111} A plane of the substrate.