| 摘要 |
The semiconductor electronic component comprises, within a semiconductor substrate (3), a first active region (2,4) having a first type of conductivity (n, n++), and a second active region (10), having a second type of conductivity (p, p++), opposite that of the first type, located between the first active region (2) and the upper face (5) of the substrate. A projecting region (6), containing a third active region (7, 8) having the first type of conductivity (n+, n++) and surmounting a first part (10a) of the second active region, is provided on the upper face of the substrate. Metallizations (13, 14, 15) are respectively located in contact with the three active regions (4, 10e, 7). The second active region includes a depletable semiconductor zone (Z) extending outside the first part (10a) of the second active region, and between the first active region (2) and the upper face (5) of the substrate. Depletion means (11; 213b, 209b, 211), located in the immediate vicinity of this depletable zone (Z) and suitable for depleting the said depletable zone under the action of a selected bias voltage, are also provided.
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