发明名称 Method for forming a capacitor having recessed lateral reaction barrier layer edges
摘要 A capacitor apparatus includes, a) a substrate having a node; b) an inner capacitor plate in ohmic electrical connection with the substrate node; c) an outer capacitor plate; d) a capacitor dielectric layer interposed between inner and outer capacitor plates; e) an electrically conductive reaction barrier layer interposed between the substrate node and the inner capacitor plate, the reaction barrier layer having outer lateral edges which are recessed beneath the inner capacitor plate; and f) oxidation barrier blocks being received over the recessed outer lateral edges beneath the inner capacitor plate. Methods of forming such a capacitor are also disclosed.
申请公布号 US5464786(A) 申请公布日期 1995.11.07
申请号 US19940328095 申请日期 1994.10.24
申请人 MICRON TECHNOLOGY, INC. 发明人 FIGURA, THOMAS A.;SCHUELE, PAUL J.
分类号 H01L21/02;H01L21/8242;(IPC1-7):H01L21/70;H01L27/00 主分类号 H01L21/02
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