| 摘要 |
<p>A method is provided for defining an ion implantation area of a desired pattern on the surface of an object without using any resist mask. A large-diameter ion beam (3) is passed through a stencil mask (2) having an opening pattern (1) to obtain a patterned ion beam (4), which is emitted to the object (7) through an optical system (5) for reduction projection. When the object (7) is irradiated with the ion beam (6) reduced in size through the optical system (5), an ion implantation area (8) is formed on the object (7) in a desired pattern. When this method is used, the ion implanting process can be simplified, because a series of processes required for providing a resist mask on the surface of the object (7) for demarcating the ion-implanted area becomes unnecessary.</p> |
