| 发明名称 |
Method of forming thin film and electronic device using thin film. |
| 摘要 |
<p>A thin film of Si or Ge network polymer is formed on a substrate and irradiated with electromagnetic radiation, then heat-treated at 200 to 1000 DEG C. Thereby, it is possible to form a thin film having a function of electric conductivity (SiC), semiconductor property (a-Si), insulating property (SiO2) or transparent property (SiO2) on a substrate as desired easily.</p> |
| 申请公布号 |
EP0680081(A2) |
申请公布日期 |
1995.11.02 |
| 申请号 |
EP19950302740 |
申请日期 |
1995.04.24 |
| 申请人 |
HITACHI, LTD. |
发明人 |
MIWA, TAKAO;MATSUDA, MINORU;WATANABE, AKIRA |
| 分类号 |
H01L21/20;H01L21/316;H01L21/48;H01L23/498;(IPC1-7):H01L21/428;H01L51/30;H01L21/475 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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