| 摘要 |
It is an object of the present invention to provide a semiconductor device having a high current driving capability and capable of high-speed circuit operation. This device has a first semiconductor region of one conductivity type on a substrate; source and drain regions of the opposite conductivity type in the first region; a first insulating film on the substrate between the source and drain regions; and a conductive gate electrode on the first insulating film. The first insulating film comprises an insulator having a dielectric constant of 8 or more and its film thickness t1 satisfies the following express (1). The source and drain regions are formed in a self-alignment manner with respect to the gate electrode: t1 < 3 x ( epsilon r/ epsilon SiO2) (nm) (1) where epsilon r is the dielectric constant of the first insulating film, and epsilon SiO2 is the dielectric constant of the silicon oxide film. <IMAGE> |
