High dielectric constant capacitor electrode structure for Gbit or higher integrated DRAM

摘要

The electrode structure (10) includes a substrate (26) with a free surface semiconductor layer (27), metal (31) and metal oxide (32) layers. The metal layer is formed from a chosen one of the group Ru, Ir, Re, Rh, Os, Pd. The metal oxide layer is chosen from the same metallic group as the initial metal. A further metallic layer (33) over the oxide layer is formed of metal from the same group. The semiconductor layer is of Silicon or Germanium. Included above the metal and metal oxide layers is a further layer having a high dielectric constant (16). The dielectric material is an oxide of ferroelectric or para-electric material such as BaxSr(1-x)TiO3 or PbZr3Ti(1-x)O3 and a fifth layer of conducting material.