Lithographiemaske und Verfahren zu deren Herstellung

摘要

This invention relates to a method for fabrication of masks suitable for improving semiconductor wafers in resolution, which comprises processes for depositing a phases shifting layer and an opaque layer on a transparent substrate, defining an opaque area and a transparent area and removing the opaque layer from the transparent area selectively, forming side wall on the sides of the opaque layer, and removing the exposed phase shifting layer selectively using the side walls and the opaque layer as a mask.