| 摘要 |
PURPOSE:To form a piezoelectric element with an excellent piezoelectricity on a silicon substrate by forming a piezoelectric thin film on a silicide film formed as an electrode on the silicon substrate and forming an upper electrode onto the piezoelectric thin film. CONSTITUTION:After an Si substate 1 is rinsed, a Ni film of 20nm thick is formed by an electron beam vapor-deposition. A thin film 3 using a lead titanate PbTiO3 as the principal component as the piezoelectric substance is formed on the nickel silicide NiSi2 film 2 by high frequency magnetron sputtering. Cr and Au are vapor-deosited on the lead titanate thin film 3 as an upper electrode 4 by using a mask of 5mmphi. Then a DC electric field of 100kV/cm is impressed between both the electrodes 2, 4 for neqrly 20min while keeping the temperature of the substrate at 200 deg.C to apply the polarization processing. |
