Semiconductor memory device with built-in confirmation unit for accelerating test

摘要

Memory cells incorporated in a semiconductor memory device are subjected to an accelerating test before delivery to a purchaser for screening out defective products, and a word line driver unit selectively drives word lines to a test voltage level higher than a standard power voltage level to word lines for strongly biasing the memory cells, wherein a confirmation unit has a first monitoring circuit for producing a warning signal indicative of the standard power voltage level supplied to the word line driver unit in the accelerating test, a second monitoring circuit for producing a detecting signal indicative of the test voltage level, and a non-volatile memory circuit enabled with the detecting signal for storing the warning signal in a readable manner so that an analyst can confirms the accelerating test duly carried out.