| 摘要 |
PURPOSE:To reduce leakage current (that is the current in standby) when a TFT is off. CONSTITUTION:A TFT-loaded SRAM comprises a contact electrode layer 16 formed to cover both a gate layer 12 of one of TFT's and a drain region of a channel layer 14 of the other TFT and an interlayer oxide film 20 formed between the channel layer and the contact electrode layer. A contact part 24 is formed of a single contact part comprising a first contact part 26 conductive with the gate layer through the gate oxide film 12 interposed between the gate layer and the channel layer and a second contact part 28 connected through the interlayer oxide film with both the first contact part and the drain region for electrical connection of both to the contact electrode layer. The contact part is placed close to a power line 22 on a pattern, while a drain region connection of the second contact part is formed oppositely to the power line with respect to the first contact part. |
