| 摘要 |
New cyclic amides of Si or Ge are of the formula LMHn (I), where M = Si or Ge; L = a satd. amide ligand of formula R1N-CHx-CHY-NR2 or an unsatd. amide ligand of formula R1N-CH=CH-NR2; R1 and R2 = 2-12C (cyclo)alkyl or tri(2-12 C (cyclo)alkyl)-silyl; X and Y = H or alkyl; and n = 0-2. USE/ADVANTAGE - (I) are used for deposition of Si or Ge (claimed) on various substrates, esp. for CVD of semiconductor films on ceramics, glass, semiconductors, metals and metal alloys. (I) can be vaporised without decomposition at normal pressure in an inert gas stream at 20-50 deg.C or in high vacuum at 50-200 deg.C (claimed). (I) can be prepd. in high yields by a simple process and give high Si or Ge yields in CVD. |
