| 摘要 |
PURPOSE:To use a photoresist material having high sensitivity and durability against chemical processing even for light in a shorter wavelength region than the wavelength of the i line by laminating at least a layer comprising a photoresist material and a specified wavelength conversion layer. CONSTITUTION:A photoresist laminated body 3 for short wavelengths is formed on a silicon oxide layer 2 on the surface of a substrate (silicon wafer) 1. The laminated body 3 consists of a layer 3a comprising a photoresist (novolac) material for the (g) line and wavelength conversion layers (two layers) 3b, 3c formed on the layer 3a. These wavelength conversion layers 3b, 3c have a two-layer structure comprising a laminated body of a first PMMA (polymethylmethacrylate) layer 3c with Ca2(PO4)2:Tl<+> dispersed as a wavelength converting material and a second PMMA layer 3b with BaMgSi2O8:EU<2+> dispersed as a wavelength converting material. |
