| 摘要 |
<p>PURPOSE:To eliminate the influence of static electricity except a spot defect of one pixel so that generation of a line defect is averted by forming insulating films thicker than the first insulating film of capacitors for charge holding. CONSTITUTION:The interlayer insulating films are formed by first forming a silicon oxidized film 14-1 of a first layer over the entire surface of a substrate, then forming a silicon oxidized film 14-2 of a second layer over the entire surface of the substrate and etching away the oxidized films 14-2 exclusive of the intersected regions of gate lines 9 and source lines 10. In such a case, the thickness of the oxidized film 14-1 is specified to, for example, <=1000 angstrom in order to assure the capacitor capacity. The film thickness of the oxidized film 14-2 is specified to >=5000 angstrom by taking the voltage resistance between the lines 9 and 10 into consideration. As a result, the sufficient capacitance of the capacitors is taken and the voltage resistance at the intersected points of the lines 9 and 10 is set higher than the gate resistance of transistors. Then, the line-defects are not formed and the sufficient value of the capacitance of the capacitors is obtd. even if the defects generated by the electrostatic breakdown are corrected.</p> |
