| 摘要 |
<p>PURPOSE:To perform pattern formation, which make parasitic capacity formed at the overlap part of a gate electrode and a drain electrode constant for each pixel in a nearly area, by single etching. CONSTITUTION:For the pattern formation of the contact layer 7c of the drain electrode of a thin film transistor, the resist patterns of the contact layers 6c and 7c of the source electrode and drain electrode are formed together without a hard baking process with positive characteristic by using positive image inversion corresponding photoresist, exposure is performed from the reverse surface of an insulating substrate 11 to perform matched exposure by a gate electrode, and a resist pattern which separates the contact layers 6c and 7c of the source electrode and drain electrode is formed by an image inverting process with characteristics of negative image inversion corresponding photoresist.</p> |
