| 摘要 |
PURPOSE:To shorten the time required for screening and to reduce the manufacturing cost by providing a screening circuit, when screening is performed for a insulation film of a ferroelectric capacitor of a ferroelectric memory. CONSTITUTION:A screening circuit consists of a word line selecting circuit 21 for a screening mode, a plate line voltage applying circuit 22, and a bit line voltage applying circuit 23. And a prescribed potential difference in which high-low relationship of voltage is alternately inversed, is applied between a second number of pieces of plate lines being more than a first number of pieces of plate lines out of plural plate lines PL and bit line BL with a number of arbitrary times at the time of a screening mode. Thereby, pulse voltage in which polarity is alternately inversed can be applied a number of arbitrary times between both ends of a insulation film of a ferroelectric capacitor C connected between the plate line and the bit line through a MOS transistor Q, and the screening of a ferroelectric film can be efficiently performed. |
