发明名称 |
Method of forming a sidewall on a semiconductor element |
摘要 |
A method fabricates a semiconductor device having a sidewall made from an insulation film at each side of a gate electrode portion. The method forms a polysilicon gate electrode (11a) on a gate oxide film (10) in a predetermined region on an n- epitaxial layer (2). A CVD silicon oxide film (15) having a predetermined thickness is formed over the polysilicon gate electrode material (11a) on the n- epitaxial layer (2). A magnetron enhanced reactive ion etching apparatus is used to etch the CVD silicon oxide film (15) while pouring a CHF3 gas made by coupling carbon, hydrogen, and fluorine and an N2 gas onto the etched material, such that the CVD silicon oxide film (15) is left only at each side of the polysilicon gate electrode material (11a), to form a sidewall (16). To avoid electrodes of the magnetron enhanced reactive ion etching apparatus from staining, CHF3/He/N2/O2 may be used for etching.
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申请公布号 |
US5462896(A) |
申请公布日期 |
1995.10.31 |
申请号 |
US19920903465 |
申请日期 |
1992.06.23 |
申请人 |
NIPPONDENSO CO., LTD. |
发明人 |
KOMURA, ATUSHI;KONDO, KENJI;KUROYANAGI, AKIRA |
分类号 |
H01L21/302;H01L21/3065;H01L21/311;H01L21/336;H01L29/78;(IPC1-7):H01L21/465 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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