发明名称 |
CVD of conformal coatings over a depression using alkylmetal precursors |
摘要 |
A CVD method for forming a conformal coating over a depression or a cave in a top surface is disclosed, which comprises the steps of forming at least one depression or a cave in said top surface where at least a portion of the depression or the cave has an inner surface; providing a reactive precursor containing at least an alkyl metal compound; and CVD forming from a gas of said reactive precursor at least one metal-containing layer over said top surface and said depression or cave such that the ratio ds/dt of the thickness (ds) of the layer on the inner surafce of the depression or cave and the thickness (dt) of the layer on the top surface is substantially one.
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申请公布号 |
US5462767(A) |
申请公布日期 |
1995.10.31 |
申请号 |
US19930139864 |
申请日期 |
1993.10.22 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;INUJIMA, TAKASHI |
分类号 |
C23C16/04;C23C16/48;H01L21/02;H01L21/268;(IPC1-7):C23C16/00;H01L21/306 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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