| 摘要 |
PURPOSE:To prevent the Al of metal electrodes having metal layers containing Al from piercing into p-n junctions and to prevent the resistance in the metal electrode attached parts from increasing, by attaching the metal electrodes ohmically through the medium of SiGe layers to a source and a drain by silicon semiconductors. CONSTITUTION:A source 4S and a drain 4D forming p-n junctions against a semiconductor part 1 are formed. After that, Si1-xGee layers 21 are formed selectively only on Si exposed outside. And an insulating layer 8 is formed so as to cover almost all surface, and a gate metal electrode 7G, and respective metal electrodes 7S and 7D of the source and the drain by Al containing Si are formed through electrodes windows 8WG, 8WS and 8WD provided on a gate electrode layer 13 by Si and in respective metal electrode forming part on the source 4S and the drain 4D respectively by sputtering, vacuum evaporation, etc.
|
