| 摘要 |
In a method of forming an adhesive layer for a blanket layer filling a contact hole in a semiconductor device, a Ti film, Ti-rich TiN film or a TiSix (x being 1.1 to 1.8) film is formed, and then a TiN (stoichiometric) film is formed. The Ti film, Ti-rich TiN film or TiSix is annealed to be converted into TiSi2 film. The formation of the Ti film, Ti-rich TiN film or a TiSix is performed by a continuous CVD process.
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