发明名称 PATTEERN INSPECTION APPARATUS
摘要 <p>PURPOSE:To make it efficiently execute the inspection of pattern shapes at a high speed with high accuracy. CONSTITUTION:The shape of an electron beam is formed to a shape resembling the inspection pattern shape or the reversal pattern thereof by a second aperture 12. The areas Mkw, Mkb of the position actually irradiated with the beam are determined in accordance with the data on the electron quantity outputted from an electron detector 20 when an inspection sample 13 is irradiated with his electron beam. The deviated areas Mkw, Mkb and a set permissible defect area Ms are compared and the dropout defects of the patterns or pattern remaining defects are decided.</p>
申请公布号 JPH07287389(A) 申请公布日期 1995.10.31
申请号 JP19940081453 申请日期 1994.04.20
申请人 TOSHIBA CORP 发明人 NISHIMURA CHIKASUKE;NISHIGAKI HISASHI;HOSAI HIROAKI;KINOSHITA HIDETOSHI;FUKUTOME YUJI;CHOKAI MASAKI;HASHIMOTO SUSUMU;KANO MASAAKI
分类号 G01N21/88;G01N21/956;G03F1/84;G03F1/86;H01L21/027;H01L21/66 主分类号 G01N21/88
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