MOLECULAR BEAM EPITAXIAL SYSTEM

摘要

PURPOSE:To grow a high-quality semiconductor epitaxial crystal on a substrate by using an excitation cell equipment which consists of a plasma excitation cell which has such a structure that a magnet is placed at the bottom of a cylindrical casing having a bottom and high-frequency coils are installed around the casing. CONSTITUTION:The growth material which consists of a group II element and a group VI element and nytrogen dopant gas are supplied onto the surface of a substrate B. An excitation cell equipment which supplies the nitrogen dopant gas opens to a crystal growth chamber 1 and its supply port 13 is installed on a casing which has a bottom 12. A magnet mounted at the bottom of the casing 12 and high-frequency coils 19 installed around the casing 12 constitute a plasma excitation cell. By using this equipment, a high-quality II-VI compound semiconductor epitaxial crystal can be grown on the substrate B.