| 摘要 |
PURPOSE:To examine the form of a pattern efficiently at a high speed and a high accuracy, by comparing the gap area between a set irradiation position found from the rotation slippage amount of the beam irradiation position and the irradiation form, and the actual irradiation position, with a set tolarable defect area. CONSTITUTION:The rotation of an examining sample 13 together with a cassette 17 is regulated by making the X-Y axial direction of an X-Y stage 16 as the standard, by recognizing an alignment mark, the sample 13 is conveyed in a chamber 14 and loaded on the stage 16, and the alignment mark is moved to the irradiation point of the electron beans by the control of an X-Y stage control device 18, so as to discharge the electron beams. A pattern examination deciding device 34 receives the electron amount from an electron detector 20 when the electron beams are radiated to the alignment mark, detects the rotation slippage amount theta of the actual irradiation position to a set beam irradiation position, and finds the slippage amount of an examination pattern irradiation beam, and a pattern defection area depending on the rotating slippage theta. When the pattern defection area is larger than the set tolerable defect area, it is decided that the pattern has a defect. |
