| 摘要 |
PURPOSE:To prevent a step cutoff in a current prevention layer of a semiconductor laser. CONSTITUTION:In this semiconductor laser and its manufacturing method, a surface of a compound semiconductor crystal 5 is coated with a mask to form grooves 8, 8 extending to a semiconductor substrate 2 by a first etching treatment. A groove 8 and an upper surface 4a of the compound semiconductor crystal 5 therebetween are coated to thinly form a surface of the compound semiconductor crystal 5 other than coated portions by a second etching process. Next, current block layers 10, 11 from the groove 8 to its outside further grow by a liquid phase epitaxial method.
|
