| 摘要 |
PURPOSE:To form a III-V compound semiconductor and light-emitting element in high quality and larger area by forming a zinc oxide on a specific surface of a sapphire so as to grow semiconductor thereon. CONSTITUTION:A buffer layer 24 is formed of a zinc oxide thin film layer on an R surface sapphire substrate 22 so as to form a light-emitting layer 26 and a charge impressing layer 27 on the buffer layer 24. At this time, the light- emitting layer 26 is a III-V compound semiconductor represented by a formula I (where 0<x<=1, 0<=y<1, 0<=z<=1, x+y+z=1). On the other hand, the charge impressing layer 27 is another III-V compound semiconductor represented by another formula II (where 0<x'<=1, 0<=y'<1, 0<=z'<1, x'+y'+z'=1) having larger band gap than that of the light-emitting layer 26. Besides the applicable surface direction of sapphire substrate may be either A or B surface. Furthermore, since said III-V compound semiconductor has the band gaps controllable by the composition of the III element, furthermore, the III-V semiconductor having direct transfer type band structure can form the light-emitting element of high emission efficiency. |
