SEMICONDUCTOR STORAGE DEVICE

摘要

PURPOSE:To obtain a semiconductor storage device capable of performing a pseudo burn-in impressing a high electric electric field on gate oxidized films of all memory cells while selecting all word lines by one operation with a low power consumption. CONSTITUTION:In this device, a power switching transistor QPB is made to be in an off-state and all address decode signals DW00 to DWi0, MW0 to MWi are made to be in selection states by the high level of a pseudo burn-in test control signal BT. Thus, through currents do not flow in ratio circuits coupled with inputs of respective inverters INV0 to INVi and all word lines WD0 to WDi are driven together to selection levels.