| 摘要 |
<p>PURPOSE:To form minute holes having uniform shape and depth so as to manufacture an electron emission source of high reliability by performing two-stage etching in a picture image region by using a resist layer and a mask material of high selection rate. CONSTITUTION:A plurality of cathode stripe lines 13 and gate lines 15 crossing each other are laminatedly formed via an insulation layer 14 on a glass substrate. A resist layer 22 patterned by photolithography technology is formed on the gate lines 15 in the crossing region. Each minute hole 18 is etched to the middle of its depth by using the resist layer 22 as a mask. The resist layer 22 is removed, and the insulation layer 14 and a mask material of high selection rate are evaporated from the inclined direction to form a film of an exfoliation layer 24 on the gate lines 15. Then the minute hole 18 is subjected to etching up to each cathode line 13 by using this exfoliation layer 24 as a mask. After the cathode material is evaporated from the inclined and the vertical directions and an approximately conical minute cold cathode is formed on each cathode line 13 in the minute hole 18, the exfoliation layer 24 is removed.</p> |
