| 摘要 |
PURPOSE:To sufficiently increase the hole concentration of a P-type clad layer of a semiconductor light-emitting element such as a semiconductor laser and a light-emitting diode, and enlarge the selection range of material of the clad layer. CONSTITUTION:As at least a part of a clad layer, super lattice composed of at least two kinds of compound semiconductor, preferably, super lattice almost available for lattice matching with a substrate is used. The compound semiconductor is constituted of at least one kind of element selected out of a group composed of Zn, Mg, Cd and Mn, and at least one element selected out of a group composed of S, Se and Te. For example, as the N-type clad layer and the P-type clad layer of semiconductor laser, an N-type ZnSe/MgS super lattice clad layer 1 and a P-type ZnSe/MgS super lattice clad layer 5 are used, respectively. When the P-type ZnSe/MgS super lattice clad layer 5 is formed, only the ZnSe layer is doped with acceptor impurities, so as to evade the MgS layer. |
