| 摘要 |
PURPOSE:To extremely reduce failure even for a long use by a brazing material with a higher melting temperature than that for joining a semiconductor element. CONSTITUTION:A metal support plate 1 and an insulation substrate 2, the metal support plate 1 and a heat-resistance insulation plate, the insulation substrate 2 and a metal cooling plate 3, the heat-resistance insulation plate/intermediate metal plate and the metal cooling plate 3/a heat stress relaxing material 4, and the intermediate metal plate and the heat tress relaxing material 4 are joined by a hard brazing material and a brazing material with an approximately 620 deg.C, melting point. Then, these members to be brazed and a semiconductor element 5 are joined by a soft brazing material. Finally, the metal cooling plate 3 and a conductor 6 for electrically connecting the intermediate metal plate are joined by a soft brazing material. Silicon gel 9 is filled to secure the breakdown strength of the semiconductor element and then epoxy resin is filled to airtightly seal silicon gel and to fix an electrode 13 and an electrode 11 is mounted. Heat fatigue resistance can be improved since a part which is easily deformed can be joined firmly and heat resistance improves by joining with a hard brazing material. |
