| 摘要 |
PURPOSE:To reduce the burden on a user and to reduce the input error simultaneously by holding variables, notch widths and standard constants corresponding to the characteristics of the respective kinds of devices as the data base inside a simulator, selecting the characteristics desired to be obtained by the user and setting the standard variable and the notch width. CONSTITUTION:The information of an analysis structure is read in the step 11 and the information of bias conditions, current conditions and time control is read in the step 12. At the time, when the user specifies the kind of the device (an MOS, for instance) and the characteristics (drain current - drain voltage characteristics or drain current - gate voltage characteristics, for instance) as the input, a program goes to the data base 13 to search one set of corresponding data and sets values written in the data base 13 as the conditions. In the data base 13, the priority order or the like of the variables, the notch width and electrode conditions, etc., determined from the respective characteristics are stored. Thereafter, similarly to normal device simulation, an initial state 14 is calculated and numerical solving 15 is performed until the conditions end. |
