| 摘要 |
PURPOSE:To obtain a highly accurate simulation method for a semiconductor device provided with a channel area by properly using a channel movement model formula and a bulk movement degree model formula by the comparison of a vertical electric field and a critical electric field at respective positions inside the device and calculating the carrier movement degree. CONSTITUTION:At the time of calculating the movement degree, a vertical electric field vector is calculated by a prescribed formula from an electric field vector and a current density vector at respective points inside a simulation area first and it is judged that it is a channel area when the absolute value is larger than a critical value and it is not a channel area when the absolute value is smaller than the critical value. Then, when the vertical electric field is larger than the critical value, muS indicating the influence of the vertical electric field and muN relating to impurity density are calculated by a prescribed model formula through a route on the left side of a chart and the model formula muSN of the movement degree is calculated. Finally, the movement degree is calculated from a horizontal electric field. Also, when it is judged as other than the channel area, a normal bulk movement degree is calculated corresponding to the route on the right side of the chart. |
