| 摘要 |
PURPOSE: To produce a capacitor having a high charge storage capacity to improve the reliability and integration degree of a semiconductor memory by forming many treanches into the surface of storage electrodes to store charges. CONSTITUTION: A layer insulation film 12 on a semiconductor substrate 11 is selectively removed to form contact holes 13 to expose the capacitor contact- forming surface of the substrate 11, W is buried to form contact plugs 14, storage electrodes 15 are formed on top of the film 12 so as to make electrical contact with the plugs, the top parts of the electrodes 15 are selectively etched to form many trenches 16 to provide a wider surface area than the occupied area of memory cells, thereby manufacturing capacitors having comparatively high charge storage capacity and minimized steps by simplified manufacturing processes. |
