| 摘要 |
<p>PURPOSE:To obtain a semiconductor storage device capable of preventing the reduction of an internal power source voltage even in the case a skew time is continued infinitely without increasing the occupancy area of capacitors and capable of suppressing performance degradation. CONSTITUTION:An oscillation circuit 12 oscillates a pulse signal Sc while the skew of an address signal is detected by a detection circuit 11 and an auxiliary boosting circuit 14 generates an internal power source voltage Vint according to the pulse signal Sc. Thus. the reduction of the internal power source voltage Vint can be prevented even in the case the skew time is continued infinitely. Moreover, the occupancy area of capacitors can be remarkably reduced because capacitances of capacitors 14c, 15c used in the auxiliary boosting circuit 14 and a main boosting circuit 15 are small.</p> |
