| 摘要 |
<p>PURPOSE: To enable reformed adhesion to a polyimide surface by arranging organic base solution, at a higher temperature than normal, on a polyimide resin surface, and performing the pretreatment to form an aminoester and a amide gruop. CONSTITUTION: In the bonding method to a polyimide resin surface 18, organic base solution is arranged at a higher temperature than usual on a polyimide resin face 18 so as to pretreat the polyimide resin face 18, so that it forms aminoester and an amide group. For example, a semiconductor die 12 which has, for example, mutual connection 14 and a polyimide inactivating layer 18 is pretreated by immersing it in hydroxyl amine. The concentration of solution is made 10-20%, and the temperature is 50-90 deg.C, and the duration is set to 30-60 sec. Then, the semiconductor die 12, having the pretreated polyimide resin layer 18 is connected to a substrate 10 by a DCA method to leave the space between assemblies. Next, a lower filler 16, such as an epoxy resin or the like, is arranged and hardened between the semiconductor die 12 and the substrate 10.</p> |
