| 摘要 |
<p>PURPOSE:To uniformly inject a very small quantity of catalytic element which promotes polycrystallization by a method wherein a very small quantity of solution, containing a crystallization promoting catalytic element, is applied to the surface of an amorphous semiconductor film by conducting a plurality of spin-coating. CONSTITUTION:An oxide film 4, to be used to add a very small quantity of a catalytic element, is formed on an amorphous silicon film 3 using hydrogen peroxide solution. The surface of the above-mentioned oxide film 4 is treated by spin-coating an Ni-ion containing solution 5, and a very small quantity of Ni ions only, which are the catalytic element, used to promote the polycrystallizability of the amorphous silicon film 3, is added to the oxide film 4. Besides, when the entire substrate is heat-treated, the catalytic element is diffused into the amorphous silicon film 3 from the oxide film 4 containing the catalytic element which promotes crystallization, and at the same time, the polycrystallization of the amorphous silicon film 3 makes progress. A semiconductor substrate 8, having a polycrystalline silicon film 7, can be obtained when the oxide film 4 is removed. Moreover, a TFT can be formed utilizing the polycrystalline silicon film 7 as an active layer.</p> |
