GROWTH METHOD OF POLYCRYSTALLINE FOR GAAS SINGLE-CRYSTAL GROWTH

摘要

placing Ga metal in a Ga boat and placing As metal in an As boat; charging the Ga boat in which the Ga metal is placed to a high temperature portion of a reaction pipe and charging the As boat in which the As metal is placed to a low temperature portion of the reaction pipe; raising the temperature of the reaction pipe along a GaAs liquidus curve to heat the temperature of the high temperature portion of the reaction pipe up to 1250≦̸C and the temperature of the low temperature portion of the reaction pipe up to 610 to 630≦̸C; after a predetermined time period elapses, making a cooling speed of the reaction pipe larger in a bottom portion than in an upper portion to cool the whole temperature of the reaction pipe up to 1000≦̸C; and fully diffuse the As which is maintained at a constant temperature state during a predetermined time in an exterior and then cooling the reaction pipe up to a room temperature.