| 摘要 |
A method for the fabrication of semiconductor memory device. The method comprises the processes of forming an MOS transistor having an impurity-diffused region of LDD structure at a semiconductor substrate having a P-well (or N-well) therein, forming a two-layer charge storage electrode in such a manner to come into contact with the impurity-diffused region of the MOS transistor, and sequentially forming a dielectric film and a plate electrode on all exposed areas of the two-layer charge storage electrode. The method forms a two-layer structure of charge storage electrode in a DRAM cell, effecting an increase of effective area in the charge storage electrode and improving the degree of integration in a semiconductor memory device.
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