发明名称 METHOD FOR CONTROLLING TEMPARATURE GRADIENT IN ACCORDING WITH INCREASING THE LENGTH OF SINGLE CRYSTIL BY VB
摘要 The method in characterized in that the length of mono-crystal is increased by increasing the T5 value by means of changing the temperature(Th) of the high temperature portion into a first lower temperature(Th') as well as changing the temperature(Tc) of the low temperature portion into a second lower temperature(Tc') in a state maintaining the same temp. gradient and crystal growth speed as the higher temperature(Th) than the m.p. of GaAs and the lower temperature(Tc) than the m.p. of GaAs.
申请公布号 KR950013004(B1) 申请公布日期 1995.10.24
申请号 KR19920013520 申请日期 1992.07.28
申请人 LG CABLE & MACHINARY CO., LTD. 发明人 KO, HAN - JUN
分类号 C30B11/02;(IPC1-7):C30B11/02 主分类号 C30B11/02
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