发明名称 |
METHOD FOR CONTROLLING TEMPARATURE GRADIENT IN ACCORDING WITH INCREASING THE LENGTH OF SINGLE CRYSTIL BY VB |
摘要 |
The method in characterized in that the length of mono-crystal is increased by increasing the T5 value by means of changing the temperature(Th) of the high temperature portion into a first lower temperature(Th') as well as changing the temperature(Tc) of the low temperature portion into a second lower temperature(Tc') in a state maintaining the same temp. gradient and crystal growth speed as the higher temperature(Th) than the m.p. of GaAs and the lower temperature(Tc) than the m.p. of GaAs.
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申请公布号 |
KR950013004(B1) |
申请公布日期 |
1995.10.24 |
申请号 |
KR19920013520 |
申请日期 |
1992.07.28 |
申请人 |
LG CABLE & MACHINARY CO., LTD. |
发明人 |
KO, HAN - JUN |
分类号 |
C30B11/02;(IPC1-7):C30B11/02 |
主分类号 |
C30B11/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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