| 摘要 |
PURPOSE:To form a single crystal of GaN, etc., to a larger size by forming a buffer layer on a substrate having easy fracturability and forming a single crystal of a compd. consisting of group III typical elements and nitrogen on this layer. CONSTITUTION:The buffer layer 2 is formed on the substrate 1 having the easy fracturability and the single crystal 3 of the compd. consisting of at least one kind of the elements among the group III typical elements and the nitrogen is grown on the buffer layer 2. The rear surface of the substrate is provided with notches to impart the easy fracturability thereto or the substrate is formed to a thickness 3 to 100mum to impart the easy fracturability thereto. Further, installation of a holder on the fracturable substrate is effective as well. While there are no particular restrictions on the substrate materials for imparting the easy fracturability, the materials having a good lattice coordinative property to the nitride compd. single crystal of the group III desired to be produced are more preferable. |
