| 摘要 |
PURPOSE:To increase the emission output at the same current by forming a lower electrode which is formed at the bottom face of a substrate in an outer part of the bottom face of the substrate except for a part just below an upper electrode. CONSTITUTION:A lower electrode 8 is formed in an outer part of the bottom face of a semiconductor substrate 2 except for a part just below an upper electrode 7 which is formed on a light take-out face 6 which is the most upper part of the semiconductor substrate 2. Since the lower electrode 8 is formed in the outer part 'm', current which runs in the outer part 'm' expands to the marginal section and the current density in the marginal section increases. Therefore, a light emitting region B formed near a P-N junction extends in the marginal direction and thereby a light-emitting area increases. There is no upper electrode 7 which cuts off the light on a part of the light take-out face 6 above the outer part 'm'. Therefore, light is effectively emitted upwards and the emission output can be increased. |
