| 摘要 |
PURPOSE:To easily form an optical thin film without damaging the substrate by heat and to improve the productivity by forming an MoO3 layer or a WO3 layer on an electronic device being the substrate by a vacuum vapor deposition method. CONSTITUTION:A liquid crystal shutter substrate is set in the vacuum tank of a vacuum vapor deposition device and the inside thereof is evacuated to 1X10<-4>Pa. Next, SiO2 being a vapor deposition material is heated by an electron beam heating and vapor deposition method and an SiO2 layer is vapor-deposited on the liquid crystal shutter substrate. Thereafter, WO3 being the vapor deposition material is similarly heated by the electron beam heating and vapor deposition method and the WO3 layer is vapor-deposited on the SiO2 layer. Furthermore, the SiO2 layer and the WO3 layer are vapor-deposited and the SiO2 layer is vapor-deposited on the WO3 layer as the most outside layer. Then, the reflection preventing layer of an optical thin film is formed. Therefore, since the WO3 and the MoO3 are material which can be easily vaporized with a low energy and the heat radiated from an evaporating source can be suppressed to be low, the substrate is not damaged by the heat. |
