发明名称 METHOD FOR MANUFACTURING DIODE
摘要 <p>PURPOSE:To supply a diode with a large amount of intermittent conduction resistance by plating the entire surface of a lead wire ahead of the soldering and preventing Cu from being scattered from a lead wire cutting part. CONSTITUTION:First, a lead wire 1 made of Cu is manufactured by the conventional method. The lead wire 1 was already cut. Especially, the entire surface of the lead wire 1 is plated before soldering. It is easier to plate the entire surface rather than only a part 4 to be soldered. A metal 2 used for plating includes Ag, Ni, Au, and Sn but it is recommended to use Ni. Then, a diamond chip 3 is held by the lead wire 1 whose entire surface is plated for soldering, thus preventing Cu from being dissipated into solder and supplying a diode with a large amount of intermittent conduction resistance.</p>
申请公布号 JPH07273260(A) 申请公布日期 1995.10.20
申请号 JP19940081088 申请日期 1994.03.29
申请人 SHINDENGEN ELECTRIC MFG CO LTD 发明人 MATSUO HIROBUMI;OGUMA HIDEKI
分类号 H01L23/48;(IPC1-7):H01L23/48 主分类号 H01L23/48
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