| 摘要 |
PURPOSE:To provide a method with which a wafer is subjected to a highly precise alignment. CONSTITUTION:The resist coated on an alignment mark part is removed (step la) by exposing the above-mentioned part, then the light reflected from the (alignment mark, exposed on the resist-removed surface, is optically read oat (step 1b), and a wafer alignment operation is conducted (step 1c) based on the abovementioned read-out information. Also, after the resist of the circumferential part of the wafer has been removed by the step 1a, the light reflected from the alignment mark, to be arranged on the circumferential part where the resist is removed by the step 1b, is read out and the position of the other alignment mark is corrected based on the read-out signal in the step 1c in this alignment method. |
