| 摘要 |
PURPOSE:To enable forming the most preferable up-and-down short-circuit preventing film with the structure of an liquid crystal display device by forming insulating film on the uppermost surface of an active matrix substrate with a low temp. magnetron sputtering method or an EB vapor depositing method. CONSTITUTION:For example, in an active matrix type color liquid crystal display device having a structure in which a color filter 9 is formed on a glass substrate 8, the color filter 9 is formed on an upper side glass substrate 8 and a common electrode 10 is formed on the filter 9 and further an up-and-down short-circuit preventing film 23 is formed upon it. In this structure, formations of the common electrode 10 and the up-and-down short-circuit preventing film 23 being processions after the formation of the color filter 9 are required to be executed in a low temp. as much as possible and silicon dioxide is used as the up-and-down short-circuit preventing film 23 and it is formed in the low temp. with the low temp. magnetron sputtering method or an electronic beam(EB) vapor deposition method. Further, even in a structure in which the color filter 9 is held in between the common electrode 10 and the up-and-down short circuit preventing film 23, the up-and-down short-circuit preventing film 23 is required to be formed in the low temp. |
