| 摘要 |
PURPOSE:To provide a gate drive use circuit device for a voltage driven semiconductor element in which the time for absorbing electromagnetic energy stored in an inductive electric equipment is decreased and a current consumption in the case of use of a high power supply voltage is reduced. CONSTITUTION:The gate drive use circuit device 1 for a voltage driven semiconductor element is configured by eliminating a constant voltage diode from a conventional gate drive use circuit device to obtain a gate drive signal generating section 2 and by adding a power supply side switching means 3 having a switching device 31 and a control section 32 switching the switching device 31 and a reference potential use switching means 4 having a switching device 41 and a control section 42 switching the switching device 41 to the generating section 2. The control sections 32, 42 receive a command signal 11a and close respectively the switching devices 31, 41 when a command signal 11a is an ON command and open respectively the switching devices 31, 41 when the command signal 11a is a OFF command. |
