| 摘要 |
PURPOSE:To provide the method for formation of an X-ray mask having excellent irradiation resisting property of an X-ray absorber pattern and also excellent microscopic workability. CONSTITUTION:A metal thin film 14 is formed on an X-ray mask substrate 12, and a silicon oxide film is formed on the metal thin film. Besides, an aperture part is formed on the silicon oxide film by anisotropic etching. Subsequently, a W-layer, which becomes an X-ray absorber layer 18, is formed only on the metal thin film of the aperture part by selectively growing tungsten using a CVD method. The remaining silicon oxide film 16a is removed by etching, and the upper surface of the metal thin film is partially exposed. Then, the exposed part of the metal thin film removed by anisotropic etching until the X-ray mask substrate is exposed. An X-ray absorber pattern 19, consisting of the metal thin film and the tungsten layer remaining on the X-ray mask substrate, is formed. |
